Anti-Stokes photoluminescence in colloidal semiconductor quantum dots

被引：113

作者：

Poles, E ^{[1
]}

Selmarten, DC ^{[1
]}

Micic, OI ^{[1
]}

Nozik, AJ ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Ctr Basic Sci, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 07期

关键词：

D O I：

10.1063/1.124570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report anti-Stokes photoluminescence (photon energy up-conversion) from size-quantized CdSe and InP nanocrystalline colloids. The observed up-conversion is highly efficient and occurs at very low excitation intensities. With low temperatures the intensity of the up-converted photoluminescence decreases while that of the usual Stokes photoluminescence increases; the up-converted photoluminescence is also restricted to energies corresponding to the band gaps of the quantum dots that are present in the colloid ensemble. The anti-Stokes photoluminescence is explained by a model that involves surface states. (C) 1999 American Institute of Physics. [S0003-6951(99)03033-8].

引用

页码：971 / 973

页数：3

共 19 条

[1]

BROSER I, 1961, P INT C SEM PHYS PRA, P771

[2]

CHEONG HM, 1998, PHYS REV B, V58, P4254

[3] Dynamics of anti-Stokes photoluminescence in type-II AlxGa1-xAs-GaInP2 heterostructures: The important role of long-lived carriers near the interface [J].

Cho, YH ;

Kim, DS ;

Choe, BD ;

Lim, H ;

Lee, JI ;

Kim, D .

PHYSICAL REVIEW B, 1997, 56 (08) :R4375-R4378

[4] CHROMIUM-INDUCED UP CONVERSION IN GAP [J].

CLERJAUD, B ;

GENDRON, F ;

PORTE, C .

APPLIED PHYSICS LETTERS, 1981, 38 (04) :212-214

[5] Interface-induced conversion of infrared to visible light at semiconductor interfaces [J].

Driessen, FAJM ;

Cheong, HM ;

Mascarenhas, A ;

Deb, SK ;

Hageman, PR ;

Bauhuis, GJ ;

Giling, LJ .

PHYSICAL REVIEW B, 1996, 54 (08) :R5263-R5266

[6] InP quantum dots: Electronic structure, surface effects, and the redshifted emission [J].

Fu, HX ;

Zunger, A .

PHYSICAL REVIEW B, 1997, 56 (03) :1496-1508

[7] Phonons in GaP quantum dots [J].

Fu, HX ;

Ozolins, V ;

Zunger, A .

PHYSICAL REVIEW B, 1999, 59 (04) :2881-2887

[8]

HALSTED RE, 1961, P INT C SEM PHYS PRA, P776

[9] Upconversion induced by deep defects in GaAs [J].

Iino, T ;

Weber, J .

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- :993-999

[10] DEEP CENTER EL2 AND ANTI-STOKES LUMINESCENCE IN SEMI-INSULATING GAAS [J].

JOHNSON, EJ ;

KAFALAS, J ;

DAVIES, RW ;

DYES, WA .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :993-995

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