Selective polysilicon deposition for frequency tuning of MEMS resonators

被引：15

作者：

Joachim, D ^{[1
]}

Lin, LW ^{[1
]}

机构：

[1] Univ Michigan, Dept Engn Mech, Ann Arbor, MI 48109 USA

来源：

FIFTEENTH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2002年

关键词：

D O I：

10.1109/MEMSYS.2002.984373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A post-fabrication process was developed to tune the frequency of a set of comb-drive resonators by selectively adding polysilicon to their rotors. Selective deposition was performed by electrically heating the resonators in a silane environment using the same input voltage but varying process times. The resonant frequency of individual devices increased 0.7 to 2%, from an average initial resonant frequency of 86.6kHz. A correlation between the change in frequency and the C location of the newly deposited material was found and verified in a finite element simulation, The data show the percent change in frequency is also dependent on thermal history and initial material properties. This work describes the trends in a new MEMS resonators frequency tuning method.

引用

页码：727 / 730

页数：4