Electron field emission from diamond-like carbon films and a patterned array by using a Ti interfacial layer

被引:22
作者
Mao, DS
Liu, XH
Wang, X
Zhu, W
机构
[1] Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
[2] Bell Labs, Murray Hill, NJ 07974 USA
关键词
Gold deposits - Ion beams - Carbon films - Diamonds - Diamond like carbon films - Reactive ion etching;
D O I
10.1063/1.1448405
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electron field emission from diamond-like carbon (DLC) films deposited on Si, Ti/Si, and Au/Si substrates by a filtered arc deposition technique was studied. As compared to DLC/Si and DLC/Au/Si, electron field emission from DLC/Ti/Si was enhanced, showing an increased emission current density and emission site density (similar to1.2x10(3)/cm(2)). An emission site density up to 2.2similar to2.2x10(3)/cm(2) was obtained after the DLC/Ti/Si had been annealed at 430 degreesC for 0.5 h. A patterned DLC/Ti/Si array fabricated by the oxygen reactive ion beam etching technique showed further field emission enhancement. An emission site density up to 3.2similar to3.5x10(3)/cm(2) and a threshold field as low as 2.1 V/mum were achieved. It was shown that the low potential barrier at the interface and high local geometric electric field enhancement around the edges produced by reactive ion beam etching were possible causes of the enhancing effects. It could also be explained by Geis' metal-diamond-vacuum triple junction emission mechanism. (C) 2002 American Institute of Physics.
引用
收藏
页码:3918 / 3921
页数:4
相关论文
共 12 条
  • [1] DERBYSHIRE K, 1995, SOLID STATE TECHNOL, V38, P71
  • [2] PROPERTIES OF FILTERED-ION-BEAM-DEPOSITED DIAMOND-LIKE CARBON AS A FUNCTION OF ION ENERGY
    FALLON, PJ
    VEERASAMY, VS
    DAVIS, CA
    ROBERTSON, J
    AMARATUNGA, GAJ
    MILNE, WI
    KOSKINEN, J
    [J]. PHYSICAL REVIEW B, 1993, 48 (07): : 4777 - 4782
  • [3] A new surface electron-emission mechanism in diamond cathodes
    Geis, MW
    Efremow, NN
    Krohn, KE
    Twichell, JC
    Lyszczarz, TM
    Kalish, R
    Greer, JA
    Tabat, MD
    [J]. NATURE, 1998, 393 (6684) : 431 - 435
  • [4] QUANTUM PHOTOYIELD OF DIAMOND(111) - STABLE NEGATIVE-AFFINITY EMITTER
    HIMPSEL, FJ
    KNAPP, JA
    VANVECHTEN, JA
    EASTMAN, DE
    [J]. PHYSICAL REVIEW B, 1979, 20 (02): : 624 - 627
  • [5] Low-threshold cold cathodes made of nitrogen-doped chemical-vapour-deposited diamond
    Okano, K
    Koizumi, S
    Silva, SRP
    Amaratunga, GAJ
    [J]. NATURE, 1996, 381 (6578) : 140 - 141
  • [6] THE DIAMOND SURFACE - ATOMIC AND ELECTRONIC-STRUCTURE
    PATE, BB
    [J]. SURFACE SCIENCE, 1986, 165 (01) : 83 - 142
  • [7] Mechanism of field emission in diamond and diamond-like carbon
    Robertson, J
    [J]. FLAT-PANEL DISPLAY MATERIALS-1998, 1998, 508 : 185 - 190
  • [8] Field emission from tetrahedral amorphous carbon
    Satyanarayana, BS
    Hart, A
    Milne, WI
    Robertson, J
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (10) : 1430 - 1432
  • [9] SURFACE SPECTROSCOPIC CHARACTERIZATION OF TINI NEARLY EQUIATOMIC SHAPE-MEMORY ALLOYS FOR IMPLANTS
    SHABALOVSKAYA, SA
    ANDEREGG, JW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (05): : 2624 - 2632
  • [10] CORRELATION OF THE ELECTRICAL-PROPERTIES OF METAL CONTACTS ON DIAMOND FILMS WITH THE CHEMICAL NATURE OF THE METAL-DIAMOND INTERFACE .2. TITANIUM CONTACTS - A CARBIDE-FORMING METAL
    TACHIBANA, T
    WILLIAMS, BE
    GLASS, JT
    [J]. PHYSICAL REVIEW B, 1992, 45 (20): : 11975 - 11981