A high-performance integrated K-band diplexer

被引:32
作者
Brown, AR [1 ]
Rebeiz, GM [1 ]
机构
[1] Univ Michigan, Dept Elect Engn, Radiat Lab, Ann Arbor, MI 48109 USA
关键词
diplexers; filters; LMDS; micromachining; packaging;
D O I
10.1109/22.780398
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the design and measurement of a planar diplexer integrated on a single silicon substrate, The diplexer channels are 5% and 6.5% relative bandwidth at 28 and 31 GHz, respectively. The diplexer is based on a micropackaged membrane supported capacitively coupled microstrip structure and is 1.5 cm x 1.6 cm and only 1.4-mm thick. The measured insertion loss is 1.4 dB (5%) and 0.9 dB (6.5%) for the two channels with better than 35-dB isolation in the 28-GHz band and better than 50-dB isolation in the 31-GHz band. The measured results include all transition and packaging effects, The diplexer has coplanar-waveguide ports and can easily be integrated with other elements such as planar antennas, low-noise amplifier, and power amplifiers.
引用
收藏
页码:1477 / 1481
页数:5
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