Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications

被引：13

作者：

Giridharan, NV

Subramanian, M

Jayavel, R ^{[1
]}

机构：

[1] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India

[2] Anna Univ, Ctr Nanosci & Technol, Madras 600025, Tamil Nadu, India

[3] Vellore Inst Technol, Dept Phys, Vellore 632014, Tamil Nadu, India

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2006年 / 83卷 / 01期

关键词：

D O I：

10.1007/s00339-005-3469-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bismuth titanate thin films co-modified by La and Nd, Bi-3.15(La0.425Nd0.425)Ti3O12 (BLNT) were grown on Pt/Ti/SiO2/Si(100) substrates by metalorganic solution decomposition method. The co-substitution leads to structural distortion with enhanced remanent polarization. The BLNT film capacitor with a top Pt electrode showed a large remanent polarization (2P(r)) of 90 mu C/cm(2) stop at an applied voltage of 10 V, which is higher than that of highly c-axis oriented BLT, and comparable with BNdT thin films. The BLNT films exhibited a fatigue-free behavior up to 1x10(9) stop switching cycles at a frequency of 1 kHz. These experimental results reveal that BLNT thin films can be used as capacitors in ferroelectric random access memory applications.

引用

页码：123 / 126

页数：4

共 27 条

[1]

AlShareef HN, 1996, APPL PHYS LETT, V68, P690, DOI 10.1063/1.116593

[2] The physics of ferroelectric memories [J].