Logic circuits with carbon nanotube transistors

被引:2152
作者
Bachtold, A [1 ]
Hadley, P [1 ]
Nakanishi, T [1 ]
Dekker, C [1 ]
机构
[1] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands
关键词
D O I
10.1126/science.1065824
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We demonstrate logic circuits with field-effect transistors based on single carbon nanotubes. Our device layout features local gates that provide excellent capacitive coupling between the gate and nanotube, enabling strong electrostatic doping of the nanotube from p-doping to n-doping and the study of the nonconventional long-range screening of charge along the one-dimensional, nanotubes. The transistors show favorable device characteristics such as high gain (>10), a large on-off ratio (>10(5)), and room-temperature operation. importantly, the local-gate layout allows for integration of multiple, devices on a single chip. Indeed, we demonstrate one-, two-, and three-transistor circuits that exhibit a range of digital logic operations, such: as an inverter, a logic NOR, a static random-access memory cell, and an ac ring oscillator.
引用
收藏
页码:1317 / 1320
页数:4
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