TEM observation of crack- and pit-shaped defects in electrically degraded GaNHEMTs

被引：134

作者：

Chowdhury, Uttiya ^{[1
]}

Jimenez, Jose L. ^{[1
]}

Lee, Cathy ^{[1
]}

Beam, Edward ^{[1
]}

Saunier, Paul ^{[1
]}

Balistreri, Tony ^{[1
]}

Park, Seong-Yong ^{[2
]}

Lee, Taehun ^{[2
]}

Wang, J. ^{[2
]}

Kim, Moon J. ^{[2
]}

Joh, Jungwoo ^{[3
]}

del Alamo, Jesus A. ^{[3
]}

机构：

[1] TriQuint Semicond, Richardson, TX 75025 USA

[2] Univ Texas Dallas, Richardson, TX 75083 USA

[3] MIT, Cambridge, MA 02139 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 10期

关键词：

electron microscopy; gallium compounds; life estimation; microwave FETs; semiconductor heterojunctions;

D O I：

10.1109/LED.2008.2003073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN high-electron mobility transistors stressed under de bias at various channel temperatures were studied using transmission electron microscopy for evidence of physical damage. Stressed devices consistently developed crack- and pit-shaped defects in the AlGaN/GaN crystal material under the drain-side edge of the gate, whereas side-by-side as-processed unstressed devices did not show these features. Furthermore, the amount of physical damage was found to correlate to the amount of electrical degradation as measured by the change in ID a from before and after stress. The formation of these defects is consistent with the theory of damage from the inverse piezoelectric effect.

引用

页码：1098 / 1100

页数：3

共 8 条

[1] CONVERSE PIEZOELECTRIC EFFECT IN [111] STRAINED-LAYER HETEROSTRUCTURES [J].