Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes

被引：190

作者：

Gundlach, DJ ^{[1
]}

Jia, LL

Jackson, TN

机构：

[1] Penn State Univ, Ctr Thin Film Devices & Elect Mat, University Pk, PA 16801 USA

[2] Penn State Univ, Dept Elect Engn, Proc Res Lab, University Pk, PA 16801 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 12期

关键词：

flat panel displays; molecular electronics; thin film transistors;

D O I：

10.1109/55.974580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated pentacene active layer organic thin film transistors (OTFTs) using chemically-modified source and drain contacts with improved contact and linear region characteristics. OTFTs fabricated on heavily doped, thermally oxidized single-crystal silicon substrates have linear field-effect mobility greater than 0.5 cm(2)/V-s at a drain-source voltage of -0.1 V, on/off current ratio greater than 10(7), and subthreshold slope as low as 0.7 V/decade.

引用

页码：571 / 573

页数：3

共 12 条

[1] Precursor route pentacene metal-insulator-semiconductor field-effect transistors
Brown, AR
Pomp, A
deLeeuw, DM
Klaassen, DBM
Havinga, EE
Herwig, P
Mullen, K
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (04) : 2136 - 2138
[2] Controlling charge injection in organic electronic devices using self-assembled monolayers
Campbell, IH
Kress, JD
Martin, RL
Smith, DL
Barashkov, NN
Ferraris, JP
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (24) : 3528 - 3530
[3] Molecular beam deposited thin films of pentacene for organic field effect transistor applications
Dimitrakopoulos, CD
Brown, AR
Pomp, A
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) : 2501 - 2508
[4] Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators
Dimitrakopoulos, CD
Purushothaman, S
Kymissis, J
Callegari, A
Shaw, JM
[J]. SCIENCE, 1999, 283 (5403) : 822 - 824
[5] GARNIER F, 1997, MRS B JUN, P52
[6] Gundlach D. J., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P111, DOI 10.1109/IEDM.1999.823858
[7] GUNDLACH DJ, 1999, 57 ANN DEV RES C, P164
[8] Contact dependence of alpha-sexithienyl thin film transistor characteristics
Lin, YY
Gundlach, DJ
Jackson, TN
[J]. ELECTRICAL, OPTICAL, AND MAGNETIC PROPERTIES OF ORGANIC SOLID STATE MATERIALS III, 1996, 413 : 413 - 418
[9] 2-DIMENSIONAL ELECTRICAL TRANSPORT OF PENTACENE THIN-FILMS DOPED WITH IODINE
MINAKATA, T
OZAKI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (04) : 1819 - 1825
[10] RETRACTED: Ambipolar pentacene field-effect transistors and inverters (Retracted article. See vol 298, pg 961, 2002)
Schön, JH
Berg, S
Kloc, C
Batlogg, B
[J]. SCIENCE, 2000, 287 (5455) : 1022 - 1023

← 1 2 →