Influence of the doping of the polymer on the dark and photoelectrical properties in the junction ITO/poly(4,4′-dipentoxy-2,2′-bithiophene)/aluminium

被引:1
作者
Camaioni, N [1 ]
Casalbore-Miceli, G [1 ]
Beggiato, G [1 ]
机构
[1] CNR, Ist Fotochim & Radiaz Alta Energia, I-40129 Bologna, Italy
关键词
doping; polymer; ITO/poly(4,4 '-dipentoxy-2,2 '-bithiophene)/aluminium;
D O I
10.1016/S0379-6779(99)00051-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The transport properties of the system, ITO/poly(4,4'-dipentoxy-2,2'-bithiophene)/aluminium, were investigated both in the dark and under white light illumination for three different oxidation states of the polymer. A deterioration of both the rectification properties in the dark and the photovoltaic performances was observed by increasing the doping level. The less-doped junction was tested in photoconductive mode and an exponential relationship was found between the photosensitivity and the reverse voltage applied to the junction. A photosensitivity of the order of 10(-3) A W-1 was achieved for an applied voltage as low as 2 V over the full range of the incident power intensity (0.4-33 mW cm(-2)). (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:169 / 173
页数:5
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