Field emission display using self-aligned carbon nanotube field emitters

被引：9

作者：

Chung, DS ^{[1
]}

Park, SH ^{[1
]}

Jin, YW ^{[1
]}

Jung, JE ^{[1
]}

Park, YJ ^{[1
]}

Lee, HW ^{[1
]}

Ko, TY ^{[1
]}

Hwang, SY ^{[1
]}

Kim, JW ^{[1
]}

Kwon, NH ^{[1
]}

Yoon, MH ^{[1
]}

Lee, CG ^{[1
]}

You, JH ^{[1
]}

Lee, NS ^{[1
]}

Kim, JM ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Suwon 440600, South Korea

来源：

IVMC 2000: PROCEEDINGS OF THE 14TH INTERNATIONAL VACUUM MICROELECTRONICES CONFERENCE | 2001年

关键词：

D O I：

10.1109/IVMC.2001.939712

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have got uniform field emission quality in 5 " active area by applying gate bias of 75 V, and the brightness is about 240 cd/cm(2) in anode bias voltage of 1.5 kV. The triode structure is fabricated by normal thin film process and carbon nanotubes tips are made by screen printing method and photolithography. The low driving voltage property and the self-aligned thick film process of carbon nanotubes have strong potential for the future emissive display development.

引用

页码：179 / 180

页数：2

共 7 条

[1]

Choi W. B., 1999, Society for Information Display 1999 International Symposium, P1134

[2] A CARBON NANOTUBE FIELD-EMISSION ELECTRON SOURCE [J].