Charge transport in polymer light-emitting diodes at high current density

被引：42

作者：

Campbell, IH

Smith, DL

Neef, CJ

Ferraris, JP

机构：

[1] Univ Calif Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[2] Univ Texas, Richardson, TX 75083 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 06期

关键词：

D O I：

10.1063/1.124531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present measured and calculated current-voltage (I-V) characteristics of diodes fabricated using a soluble poly(p-phenylene vinylene) derivative. Steady-state and pulsed electrical excitation were used to acquire the I-V characteristics for current densities from 1x10(-3) to 1.3x10(3) A/cm(2). Hole current is predominant in the diode. The I-V characteristics were fit using a device model that assumes an electric field-dependent hole mobility of the Poole-Frenkel form that is independent of the charge carrier density. The measured and calculated I-V characteristics are in good agreement over the full range of current density. The maximum electric field and carrier density is about 4x10(6) V/cm and 1x10(18) cm(-3), respectively. These results demonstrate that an electric field-dependent mobility, without carrier density dependence, provides an accurate description of hole transport in this polymer over this range of field and carrier density. (C) 1999 American Institute of Physics. [S0003-6951(99)04532-5].

引用

页码：841 / 843

页数：3

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