Effect of Ni on the transport and magnetic properties of Co1-xNixSb3 -: art. no. 115204

被引:73
作者
Dyck, JS [1 ]
Chen, W
Yang, JH
Meisner, GP
Uher, C
机构
[1] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
[2] GM Corp, Ctr Res & Dev, Mat & Proc Lab, Warren, MI 48090 USA
关键词
D O I
10.1103/PhysRevB.65.115204
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The filled skutterudite compounds based on the binary skutterudite CoSb3 are currently being investigated for their potential applications as thermoelectric materials. One route to optimization of these compounds is by doping on the Co site. An obvious candidate for an n-type dopant is Ni, since it has one more electron in its valence shell than Co. Up to now, however, only high concentrations of Ni in CoSb3 have been studied; and the valence of Ni in this compound and its influence on the transport and magnetic properties has been an open question. We present electrical resistivity, thermopower, Hall effect, magnetoresistance, and magnetic susceptibility measurements on polycrystalline, n-type Co1-xNixSb3 with x=0, 0.001, 0.003, 0.005, 0.0075, and 0.01. Our results show that in these low concentrations Ni has a dramatic effect on the transport properties. A two-band model is proposed that takes into account transport in both the conduction band and within donor impurity states formed by the Ni impurities. This model provides a consistent explanation of both the anomalous low-temperature transport properties as well as the Curie-Weiss behavior of the magnetic susceptibility. We conclude that Ni takes the tetravalent Ni4+ state, assumes the d(6) electronic configuration for the lower energy nonbonding orbitals, and gives an electron to the conduction band.
引用
收藏
页码:1 / 9
页数:9
相关论文
共 41 条
[1]   Effects of doping on the transport properties of CoSb3 [J].
Anno, H ;
Matsubara, K ;
Notohara, Y ;
Sakakibara, T ;
Tashiro, H .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (07) :3780-3786
[2]   Structural and electronic transport properties of polycrystalline p-type CoSb3 [J].
Anno, H ;
Hatada, K ;
Shimizu, H ;
Matsubara, K ;
Notohara, Y ;
Sakakibara, T ;
Tashiro, H ;
Motoya, K .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) :5270-5276
[3]  
Anno H., 1999, P 18 INT C THERM, P169
[4]   Transport properties of lightly doped CoSb3 single crystals [J].
Arushanov, E ;
Fess, K ;
Kaefer, W ;
Kloc, C ;
Bucher, E .
PHYSICAL REVIEW B, 1997, 56 (04) :1911-1917
[5]   Thermopower investigation of n- and p-type GaN [J].
Brandt, MS ;
Herbst, P ;
Angerer, H ;
Ambacher, O ;
Stutzmann, M .
PHYSICAL REVIEW B, 1998, 58 (12) :7786-7791
[6]   Properties of single crystalline semiconducting CoSb3 [J].
Caillat, T ;
Borshchevsky, A ;
Fleurial, JP .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (08) :4442-4449
[7]   Low-temperature transport properties of the filled skutterudites CeFe4-xCoxSb12 [J].
Chen, BX ;
Xu, JH ;
Uher, C ;
Morelli, DT ;
Meisner, GP ;
Fleurial, JP ;
Caillat, T ;
Borshchevsky, A .
PHYSICAL REVIEW B, 1997, 55 (03) :1476-1480
[8]  
DUDKIN LD, 1957, ZH NEORG KHIM+, V2, P212
[9]  
DUDKIN LD, 1960, SOV PHYS-SOL STATE, V2, P371
[10]   UNIVERSALITY ASPECTS OF METAL-NONMETAL TRANSITION IN CONDENSED MEDIA [J].
EDWARDS, PP ;
SIENKO, MJ .
PHYSICAL REVIEW B, 1978, 17 (06) :2575-2581