A 0.25-mu m CMOS 0.9 100-MHz DSP core

被引:19
作者
Izumikawa, M [1 ]
Igura, H [1 ]
Furuta, K [1 ]
Ito, H [1 ]
Wakabayashi, H [1 ]
Nakajima, K [1 ]
Mogami, T [1 ]
Horiuchi, T [1 ]
Yamashina, M [1 ]
机构
[1] NEC CORP LTD,ULSI DEVICE DEV LABS,SAGAMIHARA,KANAGAWA 229,JAPAN
关键词
digital signal processors; multiplying circuits; adders; SRAM chips;
D O I
10.1109/4.553178
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a 0.25-mu m CMOS 0.9-V 100-MHz DSP core which is composed of a 2-mW 16-b multiplier-accumulator and a 1.5-mW 8-kb SRAM. High-speed operation with a supply of less then 1 V has been achieved by developing 0.25-mu m CMOS technology, reducing threshold voltage to 0.3 V, developing tristate inverter 3-2/4-2 adders for the multiplier, realizing small bit-line swing operation for the SRAM, and so on. The adder circuits operate faster than conventional adders at low supply voltages, In addition, short-circuit current and area for diffusion contact are reduced, Small bit-line swing operation has been realized by using a device-deviation immune sense amplifier, Leakage current during sleep mode was reduced by the use of high threshold voltage MOSFET's.
引用
收藏
页码:52 / 61
页数:10
相关论文
共 9 条
[1]  
Bakoglu H., 1990, CIRCUITS INTERCONNEC
[2]  
BRODERSEN R, 1993, ISSCC 93 TECH DIG, P168
[3]   LOW-POWER CMOS DIGITAL DESIGN [J].
CHANDRAKASAN, AP ;
SHENG, S ;
BRODERSEN, RW .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1992, 27 (04) :473-484
[4]  
IZUMIKAWA M, 1995, ISSCC, P84
[5]   1-V POWER-SUPPLY HIGH-SPEED DIGITAL CIRCUIT TECHNOLOGY WITH MULTITHRESHOLD-VOLTAGE CMOS [J].
MUTOH, S ;
DOUSEKI, T ;
MATSUYA, Y ;
AOKI, T ;
SHIGEMATSU, S ;
YAMADA, J .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1995, 30 (08) :847-854
[6]  
NAKAMURA K, 1994, IEEE CICC, P559
[7]  
SAKATA T, 1993, MAY S VLSI CIRC, P45
[8]   ALPHA-POWER LAW MOSFET MODEL AND ITS APPLICATIONS TO CMOS INVERTER DELAY AND OTHER FORMULAS [J].
SAKURAI, T ;
NEWTON, AR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1990, 25 (02) :584-594
[9]   A 3.8-NS CMOS 16X16-B MULTIPLIER USING COMPLEMENTARY PASS-TRANSISTOR LOGIC [J].
YANO, K ;
YAMANAKA, T ;
NISHIDA, T ;
SAITO, M ;
SHIMOHIGASHI, K ;
SHIMIZU, A .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1990, 25 (02) :388-395