Implementation and validation of a new thermal model for analysis, design, and characterization of multichip power electronics devices

被引:6
作者
Profumo, F [1 ]
Tenconi, A
Facelli, S
Passerini, B
机构
[1] Politecn Torino, Dipartimento Ingn Elettr, I-10129 Turin, Italy
[2] Int Rectifier Corp Italiana, Venaria, Italy
关键词
electrothermal model; multichip; power electronics; simulation; thermal impedance;
D O I
10.1109/28.767018
中图分类号
T [工业技术];
学科分类号
08 [工学];
摘要
This paper presents a new electrothermal model for the analysis, design, and characterization of multichip power electronics devices. This model allows the junction temperature calculation for devices in which several chips are thermally interacting. In the beginning of the paper, the thermal and electrical parameters and submodels used for the simulation are described. Thus, the calculation procedure that allows us to determine the chip's temperature is illustrated. In the latter part of the paper, some results related to a practical application for which the model has been used and the experimental validation of the model are presented.
引用
收藏
页码:663 / 669
页数:7
相关论文
共 11 条
[1]
Calmon F., 1996, EPE Journal, V6, P25
[2]
Clemente S., 1993, IEEE Transactions on Power Electronics, V8, P337, DOI 10.1109/63.261001
[3]
Hefner A. R., 1993, IEEE Transactions on Power Electronics, V8, P376, DOI 10.1109/63.261007
[4]
MOTTO JW, 1995, IEEE IAS ANN M, V2, P959
[5]
Press W.H., 1992, NUMERICAL RECIPES FO
[6]
PROFUMO F, EPE 97, V2, P54
[7]
PROFUMO F, IEEE PESC 97, V1, P154
[8]
PROFUMO F, 1996, IEEE IAS ANN M, V3, P1292
[9]
Thermal Parameter Estimation Using Recursive Identification [J].
Skibinski, Gary L. ;
Sethares, William A. .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 1991, 6 (02) :228-239
[10]
SOMOS IL, 1993, IEEE IAS ANN M, V2, P1242