Charge-injection instability in perfect insulators

被引:8
作者
Christen, T
机构
[1] ABB Corporate Research Ltd.
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 07期
关键词
D O I
10.1103/PhysRevB.56.3772
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show that in a macroscopic perfect insulator, charge injection at a field-enhancing defect is associated with an instability of the insulating state or with bistability of the insulating and the charged state. The effect of a nonlinear carrier mobility is emphasized. The formation of the charged state is governed by two different processes with clearly separated time scales. First, due to a fast growth of a charge-injection mode, a localized charge cloud forms near the injecting defect (or contact). Charge injection stops when the field enhancement is screened below criticality. Secondly, the charge slowly redistributes in the bulk. The linear instability mechanism and the final charged steady state are discussed for a simple model and for cylindrical and spherical geometries. The theory explains an experimentally observed increase of the critical electric field with decreasing size of the injecting contact. Numerical results are presented for de and ac biased insulators.
引用
收藏
页码:3772 / 3778
页数:7
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