Formation of organic monolayers on silicon via gas-phase photochemical reactions

被引：26

作者：

Eves, BJ ^{[1
]}

Lopinski, GP ^{[1
]}

机构：

[1] Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON, Canada

来源：

LANGMUIR | 2006年 / 22卷 / 07期

关键词：

D O I：

10.1021/la052960a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new method for the formation of molecular monolayers on silicon surfaces utilizing gas-phase photochemical reactions is reported. Hydrogen-terminated Si(111) surfaces were exposed to various gas-phase molecules (hexene, benzaldehyde, and allylamine) and irradiated with ultraviolet light from a mercury lamp. The surfaces were studied with in situ Fourier transform infrared spectroscopy, high-resolution electron energy loss spectroscopy, and scanning tunneling microscopy. The generation of gas-phase radicals was found to be the initiator for organic monolayer formation via the abstraction of hydrogen from the H/Si(111) surface. Monolayer growth can occur through either a radical chain reaction mechanism or through direct radical attachment to the silicon dangling bonds.

引用

页码：3180 / 3185

页数：6

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