O-terminated nano-diamond ISFET for applications in harsh environment

被引：19

作者：

Dipalo, M. ^{[1
]}

Pietzka, C. ^{[1
]}

Denisenko, A. ^{[1
]}

El-Hajj, H. ^{[1
]}

Kohn, E. ^{[1
]}

机构：

[1] Univ Ulm, Inst Electron Devices & Circuits, D-89069 Ulm, Germany

来源：

关键词：

oxygen termination; NCD; ISFET; electrochemistry; harsh environment;

D O I：

10.1016/j.diamond.2008.01.106

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

The concept of an ion-sensitive FET (ISFET) on diamond with boron delta-doped channel and oxygen-terminated surface for pH sensing has been successfully transferred to large-area nano-crystalline diamond on silicon substrates. The nano-crystalline diamond layers, including the boron delta-doped channels of the FETs, were grown by hot-filament CVD. The fabricated layers were characterised by their peak concentration of boron of 3 x 10(20) l/cm(3) and FWHM of about 1 nm. This allowed approx. 50% modulation of the channel current within the gate potential range corresponding to the potential window of water electrolysis on the diamond surface. The O-termination by combination of oxygen-plasma and wet chemical treatments resulted in a pH sensitivity of the ISFETs close to the Nernst's limit in the range between pH1 and pH13. The ISFET characteristics were stable even after anodic treatment in KOH. This allows using nano-cry stall me diamond ISFETs with O-termination also as electrodes and even at anodic overpotentials. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1241 / 1247

页数：7

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