Simple design for the transportation of ex situ prepared hydrogen passivated silicon

被引:4
作者
MacLaren, DA
Curson, NJ
Atkinson, P
Holst, B
Johnson, DJ
Allison, W
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Max Planck Inst Stromungsforsch, D-37073 Gottingen, Germany
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2002年 / 20卷 / 01期
关键词
D O I
10.1116/1.1419084
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We present a design for a simple, reliable, and robust storage container suitable for the transportation of silicon crystals between clean room and experiment after hydrogen passivation by a "wet-chemical" process. The container stores the crystal in an inert atmosphere that is depleted of the water and oxygen responsible for surface oxidation. An atomic-force microscopy study of the surfaces of stored crystals confirmed that the storage method was successful and that surface oxidation can be impeded for at least 24 h. Our design is also suitable for the storage of other systems that degrade under atmospheric conditions. (C) 2002 American Vacuum Society.
引用
收藏
页码:285 / 287
页数:3
相关论文
共 12 条
[1]   Nanometer-scale lithography on Si(001) using adsorbed H as an atomic layer resist [J].
Adams, DP ;
Mayer, TM ;
Swartzentruber, BS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :1642-1649
[2]   Extracting site-specific reaction rates from steady surface morphologies: Kinetic Monte Carlo simulations of aqueous Si(111) etching [J].
Flidr, J ;
Huang, YC ;
Newton, TA ;
Hines, MA .
JOURNAL OF CHEMICAL PHYSICS, 1998, 108 (13) :5542-5553
[3]   COMPARISON OF SI(111) SURFACES PREPARED USING AQUEOUS-SOLUTIONS OF NH4F VERSUS HF [J].
HIGASHI, GS ;
BECKER, RS ;
CHABAL, YJ ;
BECKER, AJ .
APPLIED PHYSICS LETTERS, 1991, 58 (15) :1656-1658
[4]   An atom-focusing mirror [J].
Holst, B ;
Allison, W .
NATURE, 1997, 390 (6657) :244-244
[5]   UHV STM nanofabrication: Progress, technology spin-offs, and challenges [J].
Lyding, JW .
PROCEEDINGS OF THE IEEE, 1997, 85 (04) :589-600
[6]   An AFM study of the processing passivated silicon(111) of a low miscut angle [J].
MacLaren, DA ;
Curson, NJ ;
Atkinson, P ;
Allison, W .
SURFACE SCIENCE, 2001, 490 (03) :285-295
[7]   Single crystal optic elements for helium atom microscopy [J].
MacLaren, DA ;
Allison, W ;
Holst, B .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2000, 71 (07) :2625-2634
[8]   Hydrogen interaction with clean and modified silicon surfaces [J].
Oura, K ;
Lifshits, VG ;
Saranin, AA ;
Zotov, AV ;
Katayama, M .
SURFACE SCIENCE REPORTS, 1999, 35 (1-2) :1-69
[9]   STM STUDY OF SI(111)1X1-H SURFACES PREPARED BY IN-SITU HYDROGEN EXPOSURE [J].
OWMAN, F ;
MARTENSSON, P .
SURFACE SCIENCE, 1994, 303 (03) :L367-L372
[10]   ANISOTROPIC ETCHING VERSUS INTERACTION OF ATOMIC STEPS - SCANNING-TUNNELING-MICROSCOPY OBSERVATIONS ON HF/NH4F-TREATED SI(111) [J].
PIETSCH, GJ ;
KOHLER, U ;
HENZLER, M .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) :4797-4807