Mg-rich precipitates in the p-type doping of InGaN-based laser diodes

被引：49

作者：

Hansen, M ^{[1
]}

Chen, LF ^{[1
]}

Lim, SH ^{[1
]}

DenBaars, SP ^{[1
]}

Speck, JS ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 14期

关键词：

D O I：

10.1063/1.1467704

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Uniformly distributed precipitates have been observed by transmission electron microscopy in the p-type layers of laser structures. The precipitate density decreases with decreasing flow of biscyclopentadienyl-magnesium (Cp2Mg), and the hole concentration in the laser structure was higher for a lower precipitate density. The higher hole concentration reduces the threshold current density and improves the internal quantum efficiency of the laser because of the higher number of holes available for radiative recombination. The lasers with higher precipitate density also exhibit a higher resistance. The threshold voltage was reduced 30% from 20.8 V for lasers with a high precipitate density to 14.3 V for lasers with a lower precipitate density due to the lower resistance. (C) 2002 American Institute of Physics.

引用

页码：2469 / 2471

页数：3

共 20 条

[1] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[2] Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films [J].

Benaissa, M ;

Vennéguès, P ;

Beaumont, B ;

Gibart, P ;

Saikaly, W ;

Charai, A .

APPLIED PHYSICS LETTERS, 2000, 77 (14) :2115-2117

[3]

Bour DP, 1997, MATER RES SOC SYMP P, V449, P509

[4] MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes [J].

Bour, DP ;

Kneissl, M ;

Hofstetter, D ;

Romano, LT ;

McCluskey, M ;

Van de Walle, CG ;

Krusor, BS ;

Dunnrowicz, C ;

Donaldson, R ;

Walker, J ;

Johnson, NM .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3) :33-38

[5] Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire [J].

Hansen, M ;

Fini, P ;

Zhao, L ;

Abare, AC ;

Coldren, LA ;

Speck, JS ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :529-531

[6]

KOZODOY P, 1999, THESIS U CALIFORNIA

[7]

Kuramata A, 1998, MATER RES SOC SYMP P, V482, P1185

[8] Mg-doped GaN:: Similar defects in bulk crystals and layers grown on Al2O3 by metal-organic chemical-vapor deposition [J].

Liliental-Weber, Z ;

Benamara, M ;

Swider, W ;

Washburn, J ;

Grzegory, I ;

Porowski, S ;

Lambert, DJH ;

Eiting, CJ ;

Dupuis, RD .

APPLIED PHYSICS LETTERS, 1999, 75 (26) :4159-4161

[9]

McLaren A.C., 1991, TRANSMISSION ELECT M

[10]

MIYAJIMA T, 2001, 4 INT C NITR SEM DEN

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