Charge localization in disordered colossal-magnetoresistance manganites

被引:69
作者
Li, QM
Zang, J
Bishop, AR
Soukoulis, CM
机构
[1] IOWA STATE UNIV, DEPT PHYS & ASTRON, AMES, IA 50011 USA
[2] LOS ALAMOS NATL LAB, DIV THEORET, LOS ALAMOS, NM 87545 USA
[3] LOS ALAMOS NATL LAB, CTR NONLINEAR STUDIES, LOS ALAMOS, NM 87545 USA
关键词
D O I
10.1103/PhysRevB.56.4541
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The metallic or insulating nature of the paramagnetic phase of the colossal-magnetoresistance manganites is investigated via a double-exchange Hamiltonian with diagonal disorder. The mobility edge trajectory is determined with the transfer-matrix method. Density-of-states calculations indicate that random hopping alone is not sufficient to induce Anderson localization at the Fermi level with 20-30% doping. We argue that the metal-insulator transition is likely due to the formation of localized polarons from nonuniform extended states as the effective bandwidth is reduced by random hoppings and electron-electron interactions.
引用
收藏
页码:4541 / 4544
页数:4
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