Noise and magnetic domain fluctuations in spin-valve GMR heads

被引：32

作者：

Hardner, HT ^{[1
]}

Huben, MJ ^{[1
]}

Tabat, N ^{[1
]}

机构：

[1] Seagate Technol, Minneapolis, MN 55410 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

基金：

美国国家科学基金会;

关键词：

magnetic domains; noise; spin-valve heads;

D O I：

10.1109/20.800900

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Random telegraph noise (RTN) can be observed in the voltage across some spin valve heads over particular ranges of bias current, magnetic field and temperature. The detailed dependence of the RTN signal on these parameters demonstrates that the noise is due to thermally activated magnetic domain fluctuations. Further, a comparison of the effects of applied magnetic field and bias current provides information about the physical location of the magnetic domains within the head.

引用

页码：2592 / 2594

页数：3

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