Impurity-stabilized zinc-blende phase of wurtzite compounds

被引：2

作者：

Dalpian, GM ^{[1
]}

Wei, SH ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2005年 / 66卷 / 11期

关键词：

D O I：

10.1016/j.jpcs.2005.09.042

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We propose here a new approach to stabilizing the cubic zinc blende phase of semiconductors that are usually more stable in the hexagonal wurtzite phase. We show that this can be done by taking advantage of the valence and conduction band offsets between the cubic and the hexagonal phases. Due to this band offset, it will cost less energy to insert electrons by shallow donors, or insert holes by 3d acceptors in the zinc blende structure, thus stabilizing the cubic phase. (c) 2005 Published by Elsevier Ltd.

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页码：2008 / 2010

页数：3

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