Free current carrier concentration and point defects in Bi2-xSbxSe3 crystals

被引：30

作者：

Plechácek, T ^{[1
]}

Navrátil, J

Horák, J

机构：

[1] Acad Sci Czech Republ, Joint Lab Solid State Chem, Prague, Czech Republic

[2] Univ Pardubice, Pardubice 53210, Czech Republic

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2002年 / 165卷 / 01期

关键词：

crystals of tetradymite structure; Hall coefficient; electrical conductivity; reflectivity in the plasma resonance frequency; region; lattice defects;

D O I：

10.1006/jssc.2001.9486

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

From IR reflectivity spectra measurement on natural (0001) cleavage planes of Bi2-xSbxSe3 single crystals (space group D-3d(5)-R3m), values of plasma resonance frequency omega(p) were determined. Using the model respecting the existence of light and heavy electrons the dependence of free current carriers concentration on Sb-atom content in Bi2-xSbxSe3 single crystals (for x = 0.0 - 0.4) was obtained. There is a maximum in this dependence at lower Sb concentration (x congruent to 0.024). This effect is explained by a model of point defects, where both the concentration of negatively charged native defects in a Bi2Se3 lattice (anti-site defect Bi'(Se), "seven-layer lamellae" Bi3Se4-) and the concentration of vacancies in a selenium sublattice (V-Se(..)) decreases with Sb content. On this basis the observed rise of the Hall mobility R(H)sigma in the range from 500 to 1200 cm(2)/Vs is explained. (C) 2002 Elsevier Science (USA).

引用

页码：35 / 41

页数：7

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