Vertical integration of a spin dependent tunnel junction with an amorphous Si diode for MRAM application

被引：16

作者：

Sousa, RC

Freitas, PP

Chu, V

Conde, JP

机构：

[1] INESC, P-1000 Lisbon, Portugal

[2] Univ Tecn Lisboa, Dept Mat Engn, Inst Super Tecn, P-1096 Lisbon, Portugal

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

关键词：

MRAM; spin polarized tunnel junctions; diode; hydrogenated amorphous Si;

D O I：

10.1109/20.800995

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work demonstrates the successful vertical integration of magnetic tunneling junctions with hydrogenated amorphous silicon (a-Si:H) diodes. In the finished device over 11.4% current change was measured when the junction free layer is switched in an external magnetic field, applying 0.86V to the tunnel junction-diode series. In the integrated device, the TMR signal of the junction measured alone was 25.3% at 7mV bias, demonstrating junction robustness and process compatibility. The Delta I/I signal of the junction-diode series was optimized by changing the junction resistance. With the present a-Si:H technology, an RC time constant below 25ns is calculated, higher than the 2.5ns estimated for the tunneling junction.

引用

页码：2832 / 2834

页数：3

共 8 条

[1] Magnetic tunneling applied to memory [J].