Dielectric loss of oxide single crystals and polycrystalline analogues from 10 to 320 K

被引：112

作者：

Alford, NM ^{[1
]}

Breeze, J ^{[1
]}

Wang, X ^{[1
]}

Penn, SJ ^{[1
]}

Dalla, S ^{[1
]}

Webb, SJ ^{[1
]}

Ljepojevic, N ^{[1
]}

Aupi, X ^{[1
]}

机构：

[1] S Bank Univ, London SE1 0AA, England

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2001年 / 21卷 / 15期

基金：

英国工程与自然科学研究理事会;

关键词：

defects; dielectric properties; grain size; microwave properties; porosity;

D O I：

10.1016/S0955-2219(01)00324-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The key factors influencing microwave dielectric loss are examined. A comparison is made between single crystals and polycrystalline analogues. Measurements of the temperature dependence of microwave dielectric losses in various materials are reported, for temperatures between 20 and 300 K. Single crystal and polycrystalline TiO2, LaAlO3, MgO and Al2O3 are considered. The temperature dependence of dielectric losses of certain single crystals (MgO and Al2O3) are found to be in good agreement with the theory of intrinsic losses for temperatures above 100 K. At lower temperatures losses due to defects and grain boundaries dominate. The absolute value of the loss predicted by theory is considerably lower than measured values. (C) 2001 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：2605 / 2611

页数：7

共 30 条

[1] Sintered alumina with low dielectric loss [J].