Growth, morphology and annealing of thin Co layers on Au/mica

被引:19
作者
Gentner, TH
Scheurer, F
Detzel, T
Bucher, JP
机构
[1] Inst. Phys. Chim. Mat. de Strasbourg, Groupe Surfaces Interfaces, UMR 46 du CNRS, 67037 Strasbourg Cedex
[2] Rodel Europe GmbH, Unterhaching
关键词
growth mechanism; surface morphology; annealing; cobalt;
D O I
10.1016/0040-6090(95)07019-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The growth of Co on Au/mica has been studies by means of variable temperature scanning tunnelling microscopy and Auger electron spectroscopy. Growth at 300 K (low Co coverage), produces mono- and bilayer islands of about 5 nm in diameter. Rough Co layers are obtained upon further deposition of Co. Direct growth at 430 K leads to much larger and higher Co islands. Their surface density is no longer dictated by the nucleation at the dislocation of the root-3 x 22 reconstruction of the Au(111) surface but rather by the growth kinetics of diffusing Co atoms. Annealing at 500 K of films grown at 300 K leads to significant surface smoothing possibly induced by migration of Au on top of the Co film.
引用
收藏
页码:58 / 60
页数:3
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