Electric-field effects on the photodetachment of H- below the N=3 threshold

被引:11
作者
Bachau, H
Martin, F
机构
[1] UNIV BORDEAUX 1,LAB COLLIS ATOM,F-33405 TALENCE,FRANCE
[2] UNIV AUTONOMA MADRID,FAC CIENCIAS C 9,DEPT QUIM,E-28049 MADRID,SPAIN
关键词
D O I
10.1088/0953-4075/29/8/010
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We have implemented an L(2) integrable method with B-spline Oasis which allows us to calculate photodetachment cross sections of the H- ion in the presence of a constant electric field. The behaviour of the Feshbach resonances lying below the N = 2 and N = 3 thresholds is analysed in detail. Further insight on the relative importance of autoionization and tunnelling is provided by using a stabilization procedure. Our results permit us to explain most of the experimental findings and show the existence of resonance structures previously unobserved.
引用
收藏
页码:1451 / 1466
页数:16
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