Segregation and trapping of erbium at a moving crystal-amorphous Si interface

被引：19

作者：

Polman, A ^{[1
]}

Custer, JS ^{[1
]}

Zagwijn, PM ^{[1
]}

Molenbroek, AM ^{[1
]}

Alkemade, PFA ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL,FAC APPL PHYS,DIMES NF,NL-2628 CJ DELFT,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 01期

关键词：

D O I：

10.1063/1.364002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Segregation and trapping of Er during solid-phase crystallization of amorphous Si on crystalline Si is studied in a concentration range of 10(16)-5X10(20) Er/cm(3). Amorphous surface layers are prepared on Si(100) by 250 keV Er ion implantation, recrystallized st 600 degrees C, and then analyzed using high-resolution Rutherford backscattering spectrometry using 2 MeV He+ or 100 keV H+. The segregation coefficient k depends strongly on Er concentration, At Er interface areal densities below 6X10(13) Er/cm(2) nearly full segregation to the surface is observed, with k=0.01. At higher Er densities, segregation and trapping in thr crystal are observed, with k=0.20. The results are consistent with a model in which it is assumed that defects in the a-Si near the interface act as traps for the Er. (C) 1997 American Institute of Physics.

引用

页码：150 / 153

页数：4

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