Quarternary giant magnetoresistance random access memory

被引:22
作者
Wang, ZG
Nakamura, Y
机构
[1] Res. Inst. of Elec. Communication, Tohoku University
关键词
D O I
10.1063/1.361909
中图分类号
O59 [应用物理学];
学科分类号
摘要
We designed a quaternary memory using weakly coupled giant magnetoresistance (GMR) multilayers based on the fact that there are four stable states when the applied field is zero. Compared with conventional binary memory, the major advantage oi the quarternary GMR memory is that we can simply double its capacity. This design's feasibility has been proved by experiments. (C) 1996 American Institute of Physics.
引用
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页码:6639 / 6641
页数:3
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