Instability in molecular beam epitaxy due to fast edge diffusion and corner diffusion barriers

被引:93
作者
Murty, MVR [1 ]
Cooper, BH
机构
[1] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA
[2] Cornell Univ, Cornell Ctr Mat Res, Ithaca, NY 14853 USA
关键词
D O I
10.1103/PhysRevLett.83.352
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Fast edge diffusion leads to a diffusion bias during molecular beam epitaxy. Kinetic Monte Carlo simulations on a solid-on-solid model incorporating fast edge diffusion clearly show pattern formation. Fast edge diffusion combined with an excess barrier to go past the outer corner of an island results in wavy steps, similar to the Bales-Zangwill instability, in the step flow growth regime. The evolution of surface morphology with fast edge diffusion and corner diffusion barriers is discussed in terms of the surface diffusion current.
引用
收藏
页码:352 / 355
页数:4
相关论文
共 38 条
[1]   Step-adatom attraction as a new mechanism for instability in epitaxial growth [J].
Amar, JG ;
Family, F .
PHYSICAL REVIEW LETTERS, 1996, 77 (22) :4584-4587
[2]   STEP BARRIER FOR INTERLAYER-DIFFUSION IN FE/FE(100) EPITAXIAL-GROWTH [J].
AMAR, JG .
PHYSICAL REVIEW B, 1995, 52 (19) :13801-13804
[3]  
AMAR JG, IN PRESS
[4]   MORPHOLOGICAL INSTABILITY OF A TERRACE EDGE DURING STEP-FLOW GROWTH [J].
BALES, GS ;
ZANGWILL, A .
PHYSICAL REVIEW B, 1990, 41 (09) :5500-5508
[5]  
BARABASI AL, COMMUNICATION
[6]  
BARABASI AL, 1995, FRACTAL CONCEPTS SUR, pCH12
[7]   TRANSITION TO MULTILAYER KINETIC ROUGHENING FOR METAL (100) HOMOEPITAXY [J].
BARTELT, MC ;
EVANS, JW .
PHYSICAL REVIEW LETTERS, 1995, 75 (23) :4250-4253
[8]   A simple model of epitaxial growth [J].
Biehl, M ;
Kinzel, W ;
Schinzer, S .
EUROPHYSICS LETTERS, 1998, 41 (04) :443-448
[9]   THE HOMOEPITAXIAL GROWTH OF PT ON PT(111) STUDIED WITH STM [J].
BOTT, M ;
MICHELY, T ;
COMSA, G .
SURFACE SCIENCE, 1992, 272 (1-3) :161-166
[10]   Surface morphology of Ge(001) during etching by low-energy ions [J].
Chey, SJ ;
VanNostrand, JE ;
Cahill, DG .
PHYSICAL REVIEW B, 1995, 52 (23) :16696-16701