X-ray diffraction analysis of ultrathin platinum silicide films deposited on (100) silicon

被引：2

作者：

Blanton, TN ^{[1
]}

Hoople, CR ^{[1
]}

机构：

[1] Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA

来源：

POWDER DIFFRACTION | 2002年 / 17卷 / 01期

关键词：

platinum silicide; PtSi; reflectivity; thin film; X-ray diffraction;

D O I：

10.1154/1.1421603

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

X-ray diffraction methods have been used successfully for the analysis of platinum silicide films of 100 Angstrom or less in thickness. Conventional X-ray diffraction was utilized for phase identification, planar orientation, and crystalline size determination. Low-angle X-ray specular reflectivity analysis measured film thickness. As the nominal film thickness approached 100 Angstrom, it was observed that the deposited platinum film thickness was larger than expected and longer anneal times would be required to ensure homogeneous platinum silicide phase composition. (C) 2002 International Centre for Diffraction Data.

引用

页码：7 / 9

页数：3