Conductance quantization in an atom-sized contact between an STM-tip and a metal surface

被引：15

作者：

Kasai, H ^{[1
]}

Kakuda, T ^{[1
]}

Okiji, A ^{[1
]}

机构：

[1] OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN

来源：

SURFACE SCIENCE | 1996年 / 363卷 / 1-3期

关键词：

contacts; electrical transport; interfaces; scanning tunneling microscopy;

D O I：

10.1016/0039-6028(96)00282-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Numerical calculations of conductance in an atom-sized contact between an STM-tip and a metal surface have been performed within the framework of the tight-binding model. In order to take into account the constricted structure of the point contact, the scattering region was introduced in the model. Based on the results of the calculations, the effect of the scattering potential on the conductance quantization is discussed.

引用

页码：428 / 433

页数：6

共 4 条

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