Electrical transport measurements on single-walled carbon nanotubes

被引:149
作者
Nygård, J
Cobden, DH
Bockrath, M
McEuen, PL
Lindelof, PE
机构
[1] Niels Bohr Inst, Orsted Lab, DK-2100 Copenhagen, Denmark
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / 03期
关键词
D O I
10.1007/s003390051004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We review transport measurements on single-walled carbon nanotubes contacted by metal electrodes. At room temperature some devices show transistor action similar to that of p-channel field effect transistors, while others behave as gate-voltage independent wires. At low temperatures transport is usually dominated by Coulomb blockade. In this regime the quantum eigenstates of the finite-length tubes can be studied. At higher temperatures power law behaviour is observed for the temperature and bias dependence of the conductance. This is consistent with tunneling into a one-dimensional Luttinger liquid in a nanotube. We also discuss recent developments in contacting nanotubes which should soon allow study of their intrinsic transport properties.
引用
收藏
页码:297 / 304
页数:8
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