Auger effect as the origin of the fast-luminescent band of freshly anodized porous silicon

被引：26

作者：

M'ghaïeth, R

Maâref, H

Mihalcescu, I

Vial, JC

机构：

[1] Fac Sci Monastir, Lab Phys Semicond, Monastir, Tunisia

[2] Univ Grenoble 1, Spectrometrie Phys Lab, F-38402 St Martin Dheres, France

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.60.4450

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Time-resolved photoluminescence measurements are performed on oxidized and fresh porous silicon at room temperature. Comparing the evolution of the nanosecond time-delayed photoluminescence (PL) in both cases, a new feature of the PL spectra is identified: a fast red band, present both in fresh and aged samples. The nonlinear excitation intensity dependence of this component is described by a simple model, where the Auger effect inside isolated silicon quantum dots plays the dominant role. [S0163-1829(99)03932-6].

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页码：4450 / 4453

页数：4

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