High NA swing curve effects

被引:14
作者
Brunner, TA [1 ]
Gabor, AH [1 ]
Wu, CJ [1 ]
Chen, N [1 ]
机构
[1] IBM SRDC, Hopewell Jct, NY USA
来源
OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2 | 2001年 / 4346卷
关键词
optical lithography; swing curve; lithography simulation; process control; thin film optics; interference;
D O I
10.1117/12.435726
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The periodic variations of dose-to-clear, reflection and CD with resist thickness are well known phenomena commonly known as swing curves. Proper process control dictates that the resist thickness is chosen at a swing extreme, so as to reduce dose variation. Swing curves are commonly calculated for normal incidence waves. The recent trends toward high NA optics and use of off-axis illumination introduce oblique waves into the swing curve problem. Significant shifts in the magnitude and the phase of the different swing curves are now possible, and these shifts depend on exposure illumination configuration. This paper will discuss the impact of oblique waves on the swing curve. Experimental swing curves for both 248 and 193nm resist processes will be compared with expectations from simulations.
引用
收藏
页码:1050 / 1057
页数:8
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