A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communications

被引：168

作者：

Tsai, KC ^{[1
]}

Gray, PR ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1999年 / 34卷 / 07期

基金：

美国国家科学基金会;

关键词：

Balun; CMOS radio frequency (RF); microwave power amplifiers; wireless communications;

D O I：

10.1109/4.772411

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a 1-W, class-E power amplifier that is implemented in a 0.35-mu m CMOS technology and suitable for operations up to 2 GHz, The concept of mode locking is used in the design, in which the amplifier acts as an oscillator whose output is forced to run at the input frequency. A compact off-chip microstrip balun is also proposed for output differential-to-single-ended conversion. At 2-V supply and at 1.98 GHz, the power amplifier achieves 48% power-added efficiency (41% combined with the balun).

引用

页码：962 / 970

页数：9

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