Multisubband nonequilibrium electron-electron scattering in semiconductor quantum wells

被引：23

作者：

Lee, SC

Galbraith, I

机构：

[1] Department of Physics, Heriot-Watt University

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.55.R16025

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Through numerical integration of the Boltzmann equation, we calculate the time evolution of a nonequilibrium electron distribution in two subbands in a quantum well as it relaxes to equilibrium. Electron-electron scattering is mediated by the dynamically screened Coulomb potential, calculated using the random-phase approximation. A strong dependence of the relative importance of intrasubband and intersubband scattering is found depending on the nature of the initial nonequilibrium distribution.

引用

页码：16025 / 16028

页数：4

共 13 条

[1]

[Anonymous], 1992, Hot carriers in semiconductor nanostructures, DOI DOI 10.1016/B978-0-08-092570-7.50012-X

[2] Monte Carlo simulation of intersubband relaxation in wide, uniformly doped GaAs/AlxGa1-xAs quantum wells [J].