The role of structural properties on deep defect states in Cu2ZnSnS4 studied by photoluminescence spectroscopy

被引：130

作者：

Grossberg, M. ^{[1
]}

Krustok, J. ^{[1
]}

Raudoja, J. ^{[1
]}

Raadik, T. ^{[1
]}

机构：

[1] Tallinn Univ Technol, EE-19086 Tallinn, Estonia

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 10期

关键词：

TEMPERATURE; RECOMBINATION;

D O I：

10.1063/1.4750249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we investigated the photoluminescence (PL) properties of Cu2ZnSnS4 polycrystals. Two PL bands at 1.27 eV and 1.35 eV at T = 10 K were detected. Similar behaviour with temperature and excitation power was found for both PL bands and attributed to the band-to-impurity recombination. Interestingly, the thermal activation energies determined from the temperature dependence of the PL bands coincide. With the support of the Raman results, we propose that the observed PL bands arise from the band-to-impurity-recombination process involving the same deep acceptor defect with ionization energy of around 280 meV but different Cu2ZnSnS4 phase with different bandgap energy. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750249]

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