Design and fabrication of an integrated programmable floating-gate microphone

被引：16

作者：

Ma, TG ^{[1
]}

Man, TY ^{[1
]}

Chan, YC ^{[1
]}

Zohar, Y ^{[1
]}

Wong, M ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

FIFTEENTH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2002年

关键词：

D O I：

10.1109/MEMSYS.2002.984259

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An integrated, programmable floating-gate capacitive microphone has been designed and fabricated. The conducting floating-gate is electrically insulated and is "programmed" by injecting electrons into it using Fowler-Nordheim tunneling through a thin silicon dioxide film, thus capable of simulating an electret and generating a permanent electric field. A current-driving buffer based on metal-oxide-semi conductor field-effect transistors is integrated to reduce the capacitive loading of the microphone. The fabrication process is MOS compatible and promises the potential of integrating a variety of signal processing electronic circuits.

引用

页码：288 / 291

页数：4