A high heat flux IGBT micro exchanger setup

被引：19

作者：

Meysenc, L ^{[1
]}

Saludjian, L ^{[1
]}

Bricard, A ^{[1
]}

Rael, S ^{[1
]}

Schaeffer, C ^{[1
]}

机构：

[1] CEA,F-38402 ST MARTIN DHER,FRANCE

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A | 1997年 / 20卷 / 03期

关键词：

micro heat exchanger; optimization; IGBT;

D O I：

10.1109/95.623028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Much progress has been made over the past few years in the design of power electronic components leading to increasing development of IGBT transistors, Now IGBT's can dissipate power densities higher than 400 W/cm(2) and the thermal environment has become a major factor in their behavior, The aim of this paper is to demonstrate the high performance of a silicon microchannel setup, First, a thermal study enables the theoretical behavior of the setup to be analyzed. Then an optimization method based on genetic algorithms allows us to determine the best sizes for the microchannels. Finally, the theoretical results are compared with experimental measurements.

引用

页码：334 / 341

页数：8