The Fermi level in diamond

被引:126
作者
Collins, AT [1 ]
机构
[1] Kings Coll London, Wheatstone Phys Lab, London WC2R 2LS, England
关键词
D O I
10.1088/0953-8984/14/14/307
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Diamond is a wide-band-gap material with large donor and acceptor ionization energies. In principle, at room temperature and below, the Fermi energy is pinned close to the donor or acceptor level, depending on which is present in the higher concentration. In semiconductors with shallow donors and acceptors the equilibrium charge states of defects are determined by the position of the Fermi level. However, in an insulating material like diamond we show that the calculated position of the Fermi level does not necessarily predict the correct charge state of a defect, and propose instead that the charge state is influenced by the proximity of the defect to a donor (or acceptor). Qualitatively this accounts for the dependence of the charge state on the concentration of isolated substitutional nitrogen and also explains why many optical centres can be present in two different charge states in the same diamond.
引用
收藏
页码:3743 / 3750
页数:8
相关论文
共 30 条
[1]  
[Anonymous], SEMICONDUCTORS
[2]   PARTIAL DISSOCIATION OF NITROGEN AGGREGATES IN DIAMOND BY HIGH TEMPERATURE-HIGH PRESSURE TREATMENTS [J].
BROZEL, MR ;
EVANS, T ;
STEPHENSON, RF .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1978, 361 (1704) :107-127
[3]   TRANSFORMATION OF STATE OF NITROGEN IN DIAMOND [J].
CHRENKO, RM ;
TUFT, RE ;
STRONG, HM .
NATURE, 1977, 270 (5633) :141-144
[4]   Correlation between optical absorption and EPR in high-pressure diamond grown from a nickel solvent catalyst [J].
Collins, AT ;
Kanda, H ;
Isoya, J ;
Ammerlaan, CAJ ;
van Wyk, JA .
DIAMOND AND RELATED MATERIALS, 1998, 7 (2-5) :333-338
[5]   INDIRECT ENERGY-GAP OF C-13 DIAMOND [J].
COLLINS, AT ;
LAWSON, SC ;
DAVIES, G ;
KANDA, H .
PHYSICAL REVIEW LETTERS, 1990, 65 (07) :891-894
[6]   NATURE OF ACCEPTOR CENTRE IN SEMICONDUCTING DIAMOND [J].
COLLINS, AT ;
WILLIAMS, AW .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (13) :1789-&
[7]   THE SEGREGATION OF NICKEL-RELATED OPTICAL-CENTERS IN THE OCTAHEDRAL GROWTH SECTORS OF SYNTHETIC DIAMOND [J].
COLLINS, AT ;
KANDA, H ;
BURNS, RC .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1990, 61 (05) :797-810
[8]   VACANCY ENHANCED AGGREGATION OF NITROGEN IN DIAMOND [J].
COLLINS, AT .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (14) :2641-2650
[9]  
COLLINS AT, 1977, I PHYS C SER, V31, P346
[10]   COLOUR CENTRES IN IRRADIATED DIAMONDS .1. [J].
COULSON, CA ;
KEARSLEY, MJ .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 241 (1227) :433-454