Fabrication of parallel-plate nanomirror arrays for extreme ultraviolet maskless lithography

被引：21

作者：

Shroff, Y ^{[1
]}

Chen, YJ ^{[1
]}

Oldham, W ^{[1
]}

机构：

[1] Univ Calif Berkeley, EECS Dept, Elect Res Lab, Berkeley, CA 94720 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 06期

关键词：

Diffusion - Energy gap - Integrated circuit manufacture - Lithography - Mirrors - Polysilicon - Scanning electron microscopy - Semiconducting germanium - Stress analysis - Surface properties - Thermal effects - Ultraviolet radiation;

D O I：

10.1116/1.1417544

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A micromirror array for extreme ultraviolet (EUV) maskless lithography was designed and fabricated. The arrays are composed of devices with less than a 350 nm actuation gap and a surface area ranging from 1 mum(2) to 20 mum(2). The mirror layer is composed of silicon in lieu of the Mo/Si stack used for EUV mirrors in order to debug the process and to simplify the initial fabrication. Germanium was used as a sacrificial material while alpha-Si acts as a hinge for this parallel-plate design. Silicon migration into germanium was observed, so the thermal budget was restrained to 450 degreesC for the entire process. Scanning electron microscope images of working devices are provided. (C) 2001 American Vacuum Society.

引用

页码：2412 / 2415

页数：4

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