Low-noise CMOS preamplifier-shaper for silicon drift detectors

被引:25
作者
Gramegna, G
OConnor, P
Rehak, P
Hart, S
机构
[1] POLITECN BARI,DEE,I-70125 BARI,ITALY
[2] WAYNE STATE UNIV,DETROIT,MI
关键词
D O I
10.1109/23.603676
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have designed a 16-channel preamplifier-shaper for particle tracking using silicon drift detectors (SDD). The preamplifier, which is optimized for a detector capacitance of 0.2 - 0.8 pF, uses two new circuit techniques to achieve a low noise (ENC 120 e(-) + 62 e(-)/pF), high linearity (< 0.5% to 50 fC), and good tolerance to process variations and temperature and power supply fluctuations. The circuit is continuously sensitive, has no digital signals on chip, and requires no external components or critical adjustments. The peaking time of the shaper is 50 nsec and the power dissipation, including an off-chip driver, is 6.5 mW/channel. The circuit is fabricated in 1.2 mu m CMOS and can accomodate detector leakage currents of up to 1.5 uA. Although the circuit was developed for use with particle tracking detectors, these techniques are also well-suited for the design of lower-noise preamplifiers for high-resolution X-ray spectroscopy systems.
引用
收藏
页码:385 / 388
页数:4
相关论文
共 7 条
[1]  
BEAUVILLE E, 1990, NUCL INSTRUM METH A, V288, P157
[2]  
Chang Z. Y., 1991, LOW NOISE WIDE BAND
[3]   SEMICONDUCTOR DRIFT CHAMBER - AN APPLICATION OF A NOVEL CHARGE TRANSPORT SCHEME [J].
GATTI, E ;
REHAK, P .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 225 (03) :608-614
[4]  
GATTI E, 1985, NUCL INSTRUM METH A, V235, P224
[5]  
GRAMENGA G, IN PRESS NUCL INST A
[6]   LOW-NOISE TECHNIQUES IN DETECTORS [J].
RADEKA, V .
ANNUAL REVIEW OF NUCLEAR AND PARTICLE SCIENCE, 1988, 38 :217-277
[7]   LIMITS OF LOW-NOISE PERFORMANCE OF DETECTOR READOUT FRONT ENDS IN CMOS TECHNOLOGY [J].
SANSEN, WMC ;
CHANG, ZY .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1990, 37 (11) :1375-1382