A 200 MHz CMOS Q-enhanced LC bandpass filter

被引:63
作者
Kuhn, WB
Stephenson, FW
ElshabiniRiad, A
机构
[1] VIRGINIA POLYTECH INST & STATE UNIV,COLL ENGN,BLACKSBURG,VA 24061
[2] KANSAS STATE UNIV,BRADLEY DEPT ELECT ENGN,MANHATTAN,KS 66506
关键词
D O I
10.1109/4.508258
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents design techniques and performance bounds for implementing Q-enhanced, LC bandpass filters in silicon IC technologies. These filters offer significant advantages over switched capacitor and Gm-C based designs, including higher frequency of operation and lower power consumption for a given dynamic range. A prototype 200 MHz, fourth-order filter implemented in a 2 mu m n-well CMOS process is described, and measured performance is compared with theoretical predictions. The prototype filter operates at a selectivity Q of 100 and draws less than 8 mA when operating from 3 to 5 V supplies, making it potentially suitable for use as a first IF filter in modern cellular and PCS receivers.
引用
收藏
页码:1112 / 1122
页数:11
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