Reactivity of MgB2 with common substrate and electronic materials

The reactivity of MgB2 with powdered forms of common substrate and electronic materials is reported. Reaction temperatures between 600 and 800 degreesC, encompassing the range commonly employed in thin-film fabrication, were studied. The materials tested for reactivity were ZrO2, yttria stabilized zirconia, MgO, Al2O3, SiO2, SrTiO3, TiN, TaN, AlN, Si, and SiC. At 600 degreesC, MgB2 reacted only with SiO2 and Si. At 800 degreesC, however, reactions were observed for MgB2 with Al2O3, SiO2, Si, SiC, and SrTiO3. The T-c of MgB2 decreased in the reactions with SiC and Al2O3. (C) 2002 American Institute of Physics.