40-gbit/s TDM transmission technologies based on ultra-high-speed IC's

被引:32
作者
Miyamoto, Y [1 ]
Yoneyama, M [1 ]
Otsuji, T [1 ]
Yonenaga, K [1 ]
Shimizu, N [1 ]
机构
[1] NTT, Network Innovat Labs, Yokosuka, Kanagawa 2390847, Japan
关键词
broad-band photodiode; InP high electron mobility transistor (HEMT); optical fiber communication;
D O I
10.1109/4.782083
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents 40-Gbit/s time division multiplexing (TDM) transmission technologies based on 0.1-mu m-gate-length InP high electron mobility transistor IC's and a scheme for upgrading toward a terabit-per second capacity system. A 40-Gbit/s, 300-km, in-line transmission experiment and a dispersion-tolerant 40-Gbit/s duobinary transmission experiment are described as 40-Gbit/s single carrier system applications on dispersion-shifted fiber. An ultra-high-speed receiver configuration using a high-output-power photodiode is introduced to realize fully electrical receiver operation beyond 40 Gbit/s, The high-sensitivity operation of the optical receiver (-27.6 dBm @ BER = 10(-9)) is demonstrated at a data bit rate of 50 Gbit/s for the first time using a unitraveling carrier photodiode, A dense wavelength division multiplexing (DWDM) system operating up to terabits per second can be easily realized on a zero-dispersion flattened transmission line using ultra-high-speed TDM channels of 40 Gbit/s and beyond. An experiment demonstrates 1.04-bit/s DWDM transmission based on 40-Gbit/s TDM channels with high optical spectrum density (0.4 bit/s/Hz) without dispersion compensation.
引用
收藏
页码:1246 / 1253
页数:8
相关论文
共 24 条
[1]  
AISAWA S, 1998, OFC 98
[2]  
[Anonymous], ULTR EL OPT OSA SPR
[3]  
ENOKI T, 1995, IPRM 97
[4]  
Hagimoto K., 1998, OFC '98. Optical Fiber Communication Conference and Exhibit. Technical Digest. Conference Edition. 1998 OSA Technical Digest Series Vol.2 (IEEE Cat. No.98CH36177), P114, DOI 10.1109/OFC.1998.657254
[5]  
HAGIMOTO K, 1992, OFC 92, P48
[6]  
HAGIMOTO K, 1996, OECC 96, P96
[7]  
ISHII Y, 1996, 8 INT C INP REL MAT, P53
[8]   A HIGH-EFFICIENCY 50-GHZ INGAAS MULTIMODE WAVE-GUIDE PHOTODETECTOR [J].
KATO, K ;
HATA, S ;
KAWANO, K ;
YOSHIDA, J ;
KOZEN, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (12) :2728-2735
[9]   Wideband, gain-flattened, erbium-doped fibre amplifiers with 3 dB bandwidths of >50nm [J].
Masuda, H ;
Kawai, S ;
Suzuki, KI ;
Aida, K .
ELECTRONICS LETTERS, 1997, 33 (12) :1070-1072
[10]  
MATSUOKA S, 1998, NTT R D, V48, P27