Electrodeposition of Mo-Se thin films from a sulfamatic electrolyte

被引：11

作者：

Dukstiene, N

Kazancev, K

Prosicevas, I

Guobiene, A

机构：

[1] Kaunas Univ Technol, Dept Chem Phys, LT-3028 Kaunas, Lithuania

[2] Kaunas Univ Technol, Inst Phys Elect, LT-3009 Kaunas, Lithuania

来源：

JOURNAL OF SOLID STATE ELECTROCHEMISTRY | 2004年 / 8卷 / 05期

关键词：

electrodeposition; molybdenum; selenium; thin films;

D O I：

10.1007/s10008-003-0457-x

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Mo-Se thin films have been electrodeposited on conducting tin oxide (SnO2) coated glass substrates from a sulfamatic solution containing Na2MoO4 and H2SeO3 under potentiostatic conditions. The deposition potential varied from -0.6 V to -0.9 V, at a deposition temperature of 20-40 degreesC and pH 6.5. X-ray diffraction analysis revealed that the overall composition of the films deposited is consistent with the formation of MoO2 and MoSe2. The lattice parameters of the "as-deposited" MoSe2 are a=b=3.2340 Angstrom and c=13.2859 Angstrom, which fits a hexagonal structure.

引用

页码：330 / 336

页数：7

共 29 条

[1]

Anand TJS, 2001, VACUUM, V60, P431, DOI 10.1016/S0042-207X(00)00225-6

[2] RAPID SOLID-STATE SYNTHESIS OF MATERIALS FROM MOLYBDENUM-DISULFIDE TO REFRACTORIES [J].