SrBi2Ta2O9 capacitors for a mega-bit ferroelectric non-volatile memory

SrBi2Ta2O9(SBT) capacitors were integrated to the structure for a mega-bit nonvolatile memory, and their electrical properties after metallization were investigated. Annealing above 500 degrees C after contact-etching was necessary to obtain good electrical properties. A well saturated hysteresis loop with 2Pr of more than 15 mu C/cm(2) was obtained for the 0.7x0.7 mu m capacitor. The read-out polarization was very stable in 10(5) sec after the write-pulse. No fatigue or imprint was observed up to 10(11) cycles. These results show suitability of SBT capacitors for a mega-bit non-volatile memory.