Structural model for the Si(111)-4x1-In reconstruction

被引：48

作者：

Saranin, AA

Zotov, AV

Ignatovich, KV

Lifshits, VG

Numata, T

Kubo, O

Tani, H

Katayama, M

Oura, K

机构：

[1] OSAKA UNIV,FAC ENGN,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN

[2] INST AUTOMAT & CONTROL PROC,VLADIVOSTOK 690041,RUSSIA

[3] FAR EASTERN STATE UNIV,FAC PHYS & ENGN,VLADIVOSTOK 690000,RUSSIA

[4] VLADIVOSTOK UNIV ECON & SERV,VLADIVOSTOK 690600,RUSSIA

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.56.1017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A pi-bonded-chain-stacking-fault (pi-SF) model is proposed for the Si(lll)4x1-In surface structure. The model incorporates 4x1 Si(111) substrate reconstruction consisting of the sixfold Si rings in the faulted-unfaulted sequence connected through fivefold and sevenfold Si rings. Indium atoms (0.75 ML) reside above sixfold and fivefold Si rings while sevenfold Si rings form pi-bonded chains between In ridges.

引用

收藏

页码：1017 / 1020

页数：4

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