Titanium nitride membrane application to extended gate field effect transistor pH sensor using VLSI technology

被引:43
作者
Chin, YL
Chou, JC
Lei, ZC
Sun, TP
Chung, WY
Hsiung, SK
机构
[1] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Yuanlin 640, Taiwan
[2] Chung Yuan Christian Univ, Inst Elect Engn, Chungli 320, Taiwan
[3] Natl Chi Nan Univ, Inst Elect Engn, Nantou 545, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 11期
关键词
monolithic chip; extended gate field effect transistor (EGFET); titanium nitride (TiN); sensitivity; hysteresis;
D O I
10.1143/JJAP.40.6311
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new process for the fabrication of the extended gate field effect transistor (EGFET) together with complementary metal oxide semiconductor (CMOS) circuits on the same chip is reported, The sensing membrane of the EGFET is titanium nitride (TiN) conducting material and it is fabricated using the r.f. sputtering method. The chips are fabricated using the standard submicron 0.5 mum double poly double metal (DPDM) N-well CMOS IC process. No extra mask is used in the post-process. An instrument amplifier circuit is described that provides an output voltage dependent on the threshold-voltage variations in the sensing membrane. According to the experimental results, the high linear sensitivity approaches 57 mV/pH. The hysteresis voltage is 0.5 mV per cycle of buffer solutions of pH7 --> pH4 --> pH7 --> pH 10 --> pH7. This structure is also insensitive to light. This EGFET is fabricated using the standard technology and no difficulty is experienced in realizing this multi species device. The EGFET and readout circuits are produced using VLSI technology, achieving reduced area and low cost. This device has the advantages of mass production.
引用
收藏
页码:6311 / 6315
页数:5
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